PART |
Description |
Maker |
RJQ6022DPM |
600V - 10A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK6011DJA-15 |
600V - 0.1A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK6025DPD |
600V - 1A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJP60F5DPM-15 |
600V - 40A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK6024DPD-00J2 RJK6024DPD-12 |
600V - 0.4A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK6002DPH-E0 RJK6002DPH-E0T2 RJK6002DPH-E0-15 |
600V - 2A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK60S5DPP-E0-T2 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK6018DPM-00T1 |
600V - 30A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK60S4DPP-E0 RJK60S4DPP-E0-T2 |
600V - 16A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJQ6008DPM-00T0 RJQ6008DPM-15 |
600V - 10A - IGBT and Diode High Speed Power Switching
|
Renesas Electronics Corporation
|
FS4KM-12A |
HIGH-SPEED SWITCHING USE(10V DRIVE,VDSS-600V,rDS (ON) (MAX)-2.4Ω,ID-4A) HIGH-SPEED SWITCHING USE(10V DRIVE,VDSS-600V,rDS (ON) (MAX)-2.4ヘ,ID-4A)
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|